Source: Brazilian Journal of Physics. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
ABNT
ALVES, H. W. Leite et al. Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces. Brazilian Journal of Physics, v. 29, n. 4, p. 817-822, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400044. Acesso em: 31 maio 2024.APA
Alves, H. W. L., Alves, J. L. A., Nogueira, R. A., & Leite, J. R. (1999). Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces. Brazilian Journal of Physics, 29( 4), 817-822. doi:10.1590/s0103-97331999000400044NLM
Alves HWL, Alves JLA, Nogueira RA, Leite JR. Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 817-822.[citado 2024 maio 31 ] Available from: https://doi.org/10.1590/s0103-97331999000400044Vancouver
Alves HWL, Alves JLA, Nogueira RA, Leite JR. Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 817-822.[citado 2024 maio 31 ] Available from: https://doi.org/10.1590/s0103-97331999000400044